Glasgow III-V Semiconductor Epitaxial Growth Facility

Glasgow III-V Semiconductor Epitaxial Growth Facility Header

The Glasgow Epitaxy Facility (GEF) supports academic and industrial research in III-V semiconductor materials and devices, accelerating the development of next-generation photonic and electronic technologies.

We provide high-quality, customisable MOCVD & MBE growth services for GaAs- and InP-based materials to academic and commercial partners, at low-to-medium volume. We also provide design and analytical services, as well as training to support partners to drive innovations that address critical technological challenges​.

The GEF is the only facility in Scotland capable of delivering bespoke base epitaxy and regrowth services, fulfilling a crucial role within the critical technologies ecosystem of the Scottish Central Belt.

Growth Capability:

Technique

Substrate

Group-III

Group-V

Dopants

MOCVD

(3x2” CCS)

GaAs / InP / Si

2” / 3” / 4”

TMAl

TMGa

TMIn

PH3

AsH3

TESb

Si2H6

DMZn

CBr4

Fe(C2H5)2

MBE

GaAs / InP / Si

2” / 3” / 4”

Al

Ga

In

P

As

Sb

Si

Te

Be

Characterisation Capability:

Structure

Doping

Morphology

PL – wafer mapping

PL – low temperature

XRD – ω-2ϑ, RSM

*(S)TEM

ECV

Hall Effect

*SIMS

Optical Microscopy

SEM

AFM

* Analytical services provided by external partner

Management Team:

The GEF team have more than 75 years of combined experience in III-V materials design and growth.

Prof Stephen Sweeney - Academic Lead
Prof Jeff Kettle - Academic Co-Lead
Dr Adam McKenzie - Research Fellow (MOVPE Specialist)
Dr Neil Gerrard - Industrials Epitaxy Consultant

Access:

To discuss facility access and partnership on academic or commercial projects, please contact Prof. Stephen Sweeney or Dr Adam McKenzie.

Where appropriate, we may direct you to our commercial delivery partner, III-V Epi Ltd.

Research Interest:

N-IR (780 – 2500 nm) light sources

Regrowth of nanostructured lasers, such as DFBs and PCSELs

III-V on Si and selective epitaxy for photonic integration

Novel Sb-containing active structures

GaAs-based photovoltaics

Our Partners:

Sivers Photonics LogoIII-V Epi LogoGas Sensing Solutions Logo
Vector Photonics LogoKelvin Nanotechnology LogoSilson Logo
Aston University LogoCritical Technologies Accelerator Project LogoLancaster University Logo
National Physical Laboratory LogoUniversity of Strathclyde LogoUniversity of Illinois Logo